1 composite transistors XP05554 silicon npn epitaxial planer transistor for high speed switching features for high speed switching. low collector to emitter saturation voltage v ce(sat) . two elements incorporated into one package. basic part number of element 2sc3757 2 elements absolute maximum ratings (ta=25?c) unit: mm marking symbol: he internal connection parameter symbol ratings unit collector to base voltage v cbo 40 v collector to emitter voltage v ces 40 v emitter to base voltage v ebo 5v collector current i c 100 ma peak collector current i cp 300 ma total power dissipation p t 150 mw junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c rating of element overall electrical characteristics (ta=25?c) parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 15v, i e = 0 0.1 a emitter cutoff current i ebo v eb = 4v, i c = 0 0.1 a forward current transfer ratio h fe v ce = 1v, i c = 10ma 90 200 collector to emitter saturation voltage v ce(sat) i c = 10ma, i b = 1ma 0.17 0.25 v base to emitter saturation voltage v be(sat) i c = 10ma, i b = 1ma 1.0 v transition frequency f t v cb = 10v, i e = C10ma, f = 200mhz 450 mhz collector output capacitance c ob v cb = 10v, i e = 0, f = 1mhz 2 6 pf turn-on time t on 17 ns turn-off time t off 17 ns storage time t stg 10 ns 1 : emitter (tr1) 4 : collector (tr2) 2 : base (tr1) 5 : emitter (tr2) 3 : base (tr2) 6 : collector (tr1) eiaj : scC88 smini6-g1 package 5 10 2.1 0.1 1.25 0.10 1 3 2 0.2 0.05 0.12 +0.05 ?0.02 0.2 0.1 (0.425) 1.3 0.1 2.0 0.1 0 to 0.1 0.9 0.1 0.9 +0.2 ?0.1 6 5 4 (0.65) (0.65) 16 5 tr2 tr1 2 34
2 composite transistors XP05554 t on , t off test circuit t stg test circuit p t ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb 220 ? 3.3k ? 0.1 f 3.3k ? 50 ? v cc =3v v out 50 ? v in =10v v bb = C3v v in v in v out t on t off v out 10% 10% 90% 90% 0.1 f 0.1 f a v out v in =10v v bb =2v 90 ? v cc =10v 500 ? 50 ? 910 ? 500 ? 1k ? 0 v in t stg v out 10% 10% (wave form at a) 0 40 80 120 160 200 180 140 100 60 20 02040 80 60 140 120 100 160 ambient temperature ta ( ?c ) total power dissipation p t ( mw ) 0 01.2 0.2 1.0 0.4 0.8 0.6 120 100 80 60 40 20 collector current i c ( ma ) collector to emitter voltage v ce ( v ) ta=25?c 2.5ma 2.0ma 1.5ma 1.0ma 0.5ma i b =3.0ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0.01 0.03 13 0.1 0.3 1 3 10 30 100 10 30 100 300 1000 collector current i c ( ma ) base to emitter saturation voltage v be(sat) ( v ) ta=C25?c 25?c 75?c i c /i b =10 0 0.1 0.3 600 500 400 300 200 100 1 3 10 30 100 forward current transfer ratio h fe collector current i c ( ma ) v ce =1v ta=75?c 25?c C25?c C1 C3 C10 C30 C100 C300 C1000 transition frequency f t ( mhz ) emitter current i e ( ma ) 0 600 500 400 300 200 100 v cb =10v ta=25?c 0 1 6 5 4 3 2 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c
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